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HUFA76504DK8 Scheda tecnica(PDF) 2 Page - Fairchild Semiconductor |
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HUFA76504DK8 Scheda tecnica(HTML) 2 Page - Fairchild Semiconductor |
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2 / 13 page  ©2001 Fairchild Semiconductor Corporation Rev. A, June 4, 2001 Electrical Specifications TA = 25 oC, Unless Otherwise Specified PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS OFF STATE SPECIFICATIONS Drain to Source Breakdown Voltage BVDSS ID = 250µA, VGS = 0V (Figure 12) 80 - - V ID = 250µA, VGS = 0V , TA = -40 oC (Figure 12) 70 - - V Zero Gate Voltage Drain Current IDSS VDS = 75V, VGS = 0V - - 1 µA VDS = 70V, VGS = 0V, TA = 150 oC - - 250 µA Gate to Source Leakage Current IGSS VGS = ±16V - - ±100 nA ON STATE SPECIFICATIONS Gate to Source Threshold Voltage VGS(TH) VGS = VDS, ID = 250µA (Figure 11) 1 - 3 V Drain to Source On Resistance rDS(ON) ID = 2.5A, VGS = 10V (Figures 9, 10) - 0.173 0.200 Ω ID = 1.1A, VGS = 5V (Figure 9) - 0.193 0.222 Ω ID = 1.1A, VGS = 4.5V (Figure 9) - 0.200 0.230 Ω THERMAL SPECIFICATIONS Thermal Resistance Junction to Lead RθJL - - 25 oC/W Thermal Resistance Junction to Ambi- ent RθJA Pad Area = 0.50 in2 (323 mm2) (Note 2) - - 50 oC/W Pad Area = 0.027 in2 (17.4 mm2) (Figure 23) - - 191 oC/W Pad Area = 0.006 in2 (3.87 mm2) (Figure 23) - - 228 oC/W SWITCHING SPECIFICATIONS (VGS = 4.5V) Turn-On Time tON VDD = 40V, ID = 1.1A VGS = 4.5V, RGS = 43Ω (Figures 15, 21, 22) - - 100 ns Turn-On Delay Time td(ON) - 27 - ns Rise Time tr - 40 - ns Turn-Off Delay Time td(OFF) - 73 - ns Fall Time tf - 31 - ns Turn-Off Time tOFF - - 160 ns SWITCHING SPECIFICATIONS (VGS = 10V) Turn-On Time tON VDD = 40V, ID = 2.5A VGS = 10V, RGS = 47Ω (Figures 16, 21, 22) - - 41 ns Turn-On Delay Time td(ON) - 10 - ns Rise Time tr - 18 - ns Turn-Off Delay Time td(OFF) - 115 - ns Fall Time tf - 36 - ns Turn-Off Time tOFF - - 230 ns GATE CHARGE SPECIFICATIONS Total Gate Charge Qg(TOT) VGS = 0V to 10V VDD = 40V, ID = 1.1A, Ig(REF) = 1.0mA (Figures 14, 19, 20) - 6.6 10 nC Gate Charge at 5V Qg(5) VGS = 0V to 5V - 3.4 5.4 nC Threshold Gate Charge Qg(TH) VGS = 0V to 1V - 0.3 0.5 nC Gate to Source Gate Charge Qgs - 0.8 - nC Gate to Drain “Miller” Charge Qgd - 1.4 - nC CAPACITANCE SPECIFICATIONS Input Capacitance CISS VDS = 25V, VGS = 0V, f = 1MHz (Figure 13) - 270 - pF Output Capacitance COSS - 62 - pF Reverse Transfer Capacitance CRSS - 11 - pF Source to Drain Diode Specifications PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS Source to Drain Diode Voltage VSD ISD =1.1A - - 1.25 V ISD = 0.7A - - 1.00 V Reverse Recovery Time trr ISD = 5.0A, dISD/dt = 100A/µs - - 62 ns Reverse Recovered Charge QRR ISD = 5.0A, dISD/dt = 100A/µs - - 115 nC HUFA76504DK8 |
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