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TMA12N65H Scheda tecnica(PDF) 3 Page - Wuxi Unigroup Microelectronics Company |
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TMA12N65H Scheda tecnica(HTML) 3 Page - Wuxi Unigroup Microelectronics Company |
3 / 8 page TMA12N65H, TMP12N65H www.tsinghuaicwx.com Wuxi Unigroup Microelectronics Company V3.0 3 Typical Characteristics T J = 25ºC, unless otherwise noted 0 0.5 1 1.5 2 2.5 3 -75 -25 25 75 125 175 0.9 0.95 1 1.05 1.1 1.15 1.2 -50 -25 0 25 50 75 100 125 150 0.1 1 10 0.2 0.4 0.6 0.8 1 Q g, Total Gate Charge (nC) V SD, Source-to-Drain Voltage (V) T J, Junction Temperature (ºC) T J, Junction Temperature (ºC) Figure 3. BV DSS vs. Temperature Figure 4. On-Resistance vs. Temperature V DS, Drain-to-Source Voltage (V) I D, Drain Current (A) Figure 1. Output Characteristics (T J = 25ºC) Figure 2. On-Resistance vs. Drain Current Figure 5. Gate Charge Figure 6. Body Diode Forward Voltage T J = 25ºC T J = 150ºC 0 2 4 6 8 10 12 14 16 18 0 2 4 6 8 10 12 14 16 18 20 20V 10V 8V 7V 6V 5V 0.4 0.45 0.5 0.55 0.6 0.65 0.7 0.75 0 5 10 15 20 T J = 25ºC V GS = 10V 0 2 4 6 8 10 12 0 10 20 30 40 50 V DD = 130V V DD = 520V V DD = 325V |
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