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TSM10NB60 Scheda tecnica(PDF) 1 Page - Taiwan Semiconductor Company, Ltd

Il numero della parte TSM10NB60
Spiegazioni elettronici  High power and current handling capability
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Produttore elettronici  TSC [Taiwan Semiconductor Company, Ltd]
Homepage  http://www.taiwansemi.com
Logo TSC - Taiwan Semiconductor Company, Ltd

TSM10NB60 Scheda tecnica(HTML) 1 Page - Taiwan Semiconductor Company, Ltd

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TSM10NB60
Taiwan Semiconductor
Document Number: DS_P0000276
1
Version: A15
N-Channel Power MOSFET
600V, 10A, 0.75
Ω
FEATURES
● High power and current handling capability
● Pb-free plating
● Compliant to RoHS Directive 2011/65/EU and in
accordance to WEE 2002/96/EC
● Halogen-free according to IEC 61249-2-21
definition
APPLICATION
● Power Supply
● Lighting
KEY PERFORMANCE PARAMETERS
PARAMETER
VALUE
UNIT
VDS
600
V
RDS(on) (max)
0.75
Ω
Qg
39
nC
ITO-220
ABSOLUTE MAXIMUM RATINGS (T
A = 25°C unless otherwise noted)
PARAMETER
SYMBOL
Limit
UNIT
Drain-Source Voltage
VDS
600
V
Gate-Source Voltage
VGS
±30
V
Continuous Drain Current
(Note 1)
TC = 25°C
ID
10
A
TC = 100°C
7.7
A
Pulsed Drain Current
(Note 2)
IDM
30
A
Total Power Dissipation @ TC = 25°C
PDTOT
50
W
Single Pulsed Avalanche Energy
(Note 3)
EAS
37.5
mJ
Single Pulsed Avalanche Current
(Note 3)
IAS
10
A
Operating Junction and Storage Temperature Range
TJ, TSTG
- 55 to +150
°C
THERMAL PERFORMANCE
PARAMETER
SYMBOL
Limit
UNIT
Junction to Case Thermal Resistance
RӨJC
2.5
°C/W
Junction to Ambient Thermal Resistance
RӨJA
62
°C/W
Notes: RӨJA is the sum of the junction-to-case and case-to-ambient thermal resistances. The case thermal reference is defined
at the solder mounting surface of the drain pins. RӨJA is guaranteed by design while RӨCA is determined by the user’s board
design. RӨJA shown below for single device operation on FR-4 PCB with minimum recommended footprint in still air.


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