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1PS66SB63 Scheda tecnica(PDF) 4 Page - NXP Semiconductors |
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1PS66SB63 Scheda tecnica(HTML) 4 Page - NXP Semiconductors |
4 / 10 page 9397 750 13846 © Koninklijke Philips Electronics N.V. 2004. All rights reserved. Product data sheet Rev. 02 — 3 December 2004 4 of 10 Philips Semiconductors 1PS66SB63; 1PS79SB63 5 V, 20 mA low Cd Schottky barrier diodes (1) Tamb = 125 °C. (2) Tamb =85 °C. (3) Tamb =25 °C. (1) Tamb = 125 °C. (2) Tamb =85 °C. (3) Tamb =25 °C. Fig 1. Forward current as a function of forward voltage; typical values Fig 2. Reverse current as a function of reverse voltage; typical values Tamb =25 °C; f = 1 MHz. Fig 3. Diode capacitance as a function of reverse voltage; typical values 1 VF (V) 0 0.2 0.4 IF (mA) 0.6 0.8 102 10 1 10−1 10−2 mhc183 (1) (2) (3) 5 VR (V) 01 2 IR ( µA) 34 103 102 10 1 10−1 mhc184 (1) (2) (3) 01 Cd (pF) 5 VR (V) 0.38 0.34 0.26 0.22 0.3 23 4 mhc185 |
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